Dielectric properties of Al-doped Ti₃SiC₂ as a novel microwave absorbing material

详细信息    查看全文

• 作者：Zhimin Li ; ^{lizhmin@163.com" class="auth_mail" title="E-mail the corresponding author} ; Zi Yang ; Maolin Zhang ; Yangxi Yan ; Yunxia Huang ; Yue Hao
• 关键词：Ti3SiC2 ; Al doping ; Dielectric property ; Microwave absorbing material
• 刊名：Ceramics International
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：43
• 期：1
• 页码：222-227
• 全文大小：1260 K

文摘

Al-doped Ti₃SiC₂ powders were synthesized by solid state reaction under a vacuum atmosphere from Ti/Si/TiC powders, with an optimum Al doping content. Results showed that the Ti₃SiC₂ major phase could be generated at a temperature as low as 1250 °C through Al doping, and that the doped powders had a relatively narrow particle size distribution with a good dispersibility. The formation of Ti₃Si_1−xAl_xC₂ solid solution was further proved by XPS. The microwave dielectric parameters and reflection loss of the prepared Al-doped Ti₃SiC₂ samples were determined in the frequency range of 8.2–12.4 GHz. It was found that the sample synthesized at 1350 °C showed the high values in both the imaginary part of permittivity ε″ and dielectric loss tan δ, which were 4.39–7.32 and 0.57–0.78, respectively. For the microwave absorbing coating with a 2.6 mm thickness of the sample, a better reflection loss of almost below −12 dB was obtained in the whole frequency range of 8.2–12.4 GHz.