We demonstrate that Gadolinium doped Ceria films grow epitaxial on Yttria stabilized Zirconia in (111) and (110) orientation.
We show by high energy grazing incidence x-ray diffraction that the films are single crystalline and twinning free.
We give evidence that upon annealing the lattice expands as a result of oxygen vacancy formation.
We demonstrate the interface to the YSZ substrate is instable upon annealing to 1400 K.
X-ray photoemission proofs Yttrium segregation to the surface of the GDC films.