Fast-response solar-blind ultraviolet photodetector with a graphene/β-Ga₂O₃/graphene hybrid structure

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• 作者：Meilin Ai^a ; Daoyou Guo^a ; Yingyu Qu^a ; Wei Cui^a ; Zhenping Wu^a ; Peigang Li^a ; Linghong Li^b ; Weihua Tang^a ; ^{whtang@bupt.edu.cn" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Ga2O3 ; Graphene ; Ultraviolet photodetector ; Laser molecular beam epitaxy technique
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：25 January 2017
• 年：2017
• 卷：692
• 期：Complete
• 页码：634-638
• 全文大小：1092 K

文摘

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d="p0010">Mainly (d="mmlsi1" class="mathmlsrc">data-mathURL="/science?_ob=MathURL&_method=retrieve&_eid=1-s2.0-S0925838816328390&_mathId=si1.gif&_user=111111111&_pii=S0925838816328390&_rdoc=1&_issn=09258388&md5=1a10fe68cf3220cc6b452710644caaff">dth="10" alt="View the MathML source" style="margin-top: -5px; vertical-align: middle" title="View the MathML source" src="/sd/grey_pxl.gif" data-inlimgeid="1-s2.0-S0925838816328390-si1.gif">dden">de">$\overline{2}$ 01) oriented β-Ga₂O₃ thin films have been grown on graphene/Al₂O₃ stack by L-MBE.

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d="p0015">A vertical sandwich structure of graphene/β-Ga₂O₃ thin films/graphene as a potential solar-blind photodetector is formed.

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d="p0020">The high performance of the photodetector is obtained due to the existence of Schottky barriers.

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