Optimal process parameters for phosphorus spin-on-doping of germanium
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- 作者：Virginia Boldrinia ; b ; Sara Maria Carturana ; b ; sara.carturan@lnl.infn.it" class="auth_mail" title="E-mail the corresponding author ; saramaria.carturan@unipd.it" class="auth_mail" title="E-mail the corresponding author ; Gianluigi Maggionia ; b ; Enrico Napolitania ; b ; Daniel Ricardo Napolib ; Riccardo Camattaric ; Davide De Salvadora ; b
- 关键词：Germanium ; Spin-on-doping ; Curing ; Phosphorus diffusion ; Electrical activation ; Surface corrosion
- 刊名：Applied Surface Science
- 出版年：2017
- 出版时间：15 January 2017
- 年：2017
- 卷：392
- 期：Complete
- 页码：1173-1180
- 全文大小：1778 K
文摘
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Optimized protocol for the application of phosphorus spin-on-doping to Ge surface.
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Homogeneous n-type Ge layers, fully electrically active, are obtained.
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Crucial parameters for SOD curing are relative humidity, time and temperature.
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Characterization of Ge loss from the surface into the SOD film by diffusion.
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Spike annealing in standard tube chamber furnace are performed.