H₂-Ar dilution for improved c-Si quantum dots in P-doped SiN_x:H thin film matrix

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• 作者：Jia Liu^a ; Weijia Zhang^b ; ^{zwjghx@126.com} ; Shengzhong (Frank) Liu^a ; ^c ; ^{szliu@dicp.ac.cn} ; ^{liusz@snnu.edu.cn}
• 关键词：c-Si quantum dot ; SiNx ; H thin film ; Phosphorus-doping ; PECVD
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：28 February 2017
• 年：2017
• 卷：396
• 期：Complete
• 页码：235-242
• 全文大小：2490 K
• 卷排序：396

文摘

Phosphorous-doped SiNx:H thin films containing c-Si QDs were prepared by PECVD in H2-Ar mixed dilution under low temperature. QD density and QD size can be controlled by tuning H2/Ar flow ratio. The sample prepared at the H2/Ar flow ratio of 100/100 possesses both wide band gap and excellent conductivity. Detail discussion has been presented for illustrating the influence of H2/Ar mixed dilution on the crystallization process and P-doping.