Enhancing photoactivity for hydrogen generation by electron tunneling via flip-flop hopping over iodinated graphitic carbon nitride

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• 作者：Zhen Li^a ; ^b ; Bin Tian^a ; ^b ; Wenyan Zhang^a ; Xuqiang Zhang^a ; Yuqi Wu^a ; Gongxuan Lu^a ; ^{gxlu@lzb.ac.cn}
• 关键词：Iodine-decorated graphitic carbon nitride ; Flip-flop electron tunneling ; Enhanced conductivity ; Lifetime of photogenerated charges ; High photocatalytic activity for hydrogen generation
• 刊名：Applied Catalysis B: Environmental
• 出版年：2017
• 出版时间：5 May 2017
• 年：2017
• 卷：204
• 期：Complete
• 页码：33-42
• 全文大小：4378 K
• 卷排序：204

文摘

The significant electron tunneling over I-g-C3N4/Ag was achieved by I3− and I5− cluster doping. The tunneling takes place via strong Rashba spin-orbit coupling in p orbitals of doped polyiodides. The polyiodides bridged the easier transfer route between far-located carbon atoms of g-C3N4. The faster electron transfer rate could reduce the charges recombination and prolong its lifetime. The H2 evolution activity over I-g-C3N4/Ag was about three time higher than that of g-C3N4/Ag.