Carrier Lifetime in Liquid-phase Crystallized Silicon on Glass

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• 作者：Michael Vetter ; ^{michael.vetter@leibniz-ipht.de" class="auth_mail" title="E-mail the corresponding author} ; Annett Gawlik ; Jonathan Plentz ; Gudrun Andrä
• 关键词：multicrystalline silicon ; thin film ; laser crystallization ; carrier lifetime ; quasi steady-state photoconductance
• 刊名：Energy Procedia
• 出版年：2016
• 出版时间：August 2016
• 年：2016
• 卷：92
• 期：Complete
• 页码：248-254
• 全文大小：594 K

文摘

Liquid-phase crystallized silicon on glass (LPCSG) presents a promising material to fabricate high quality silicon thin films, e.g. for solar cells and modules. Barrier layers and a doped amorphous silicon layer are deposited on the glass substrate followed by crystallization with a line focus laser beam. In this paper we introduce injection level dependent lifetime measurements generated by the quasi steady-state photoconductance decay method (QSSPC) to characterize LPCSG absorbers. This contactless method allows a determination of the LPCSG absorber quality already at an early stage of solar cell fabrication, and provides a monitoring of the absorber quality during the solar cell fabrication steps. We found minority carrier lifetimes higher than 200ns in our layers (e.g. n-type absorber with N_D=2x10¹⁵cm^-3) indicating a surface recombination velocity S_BL<3000cm/s at the barrier layer/Si interface.