The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique
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- 作者：I. Oraka ; b ; A. Kocyigitc ; adem.kocyigit@igdir.edu.tr" class="auth_mail" title="E-mail the corresponding author ; A. Turutd
- 关键词：ZnO/n-Si device ; Photodiode ; Photovoltaics ; I-V and C-V characteristics ; Memristors
- 刊名：Journal of Alloys and Compounds
- 出版年：2017
- 出版时间：15 January 2017
- 年：2017
- 卷：691
- 期：Complete
- 页码：873-879
- 全文大小：2350 K
文摘
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Au/ZnO/n-Si device was attained by atomic layer deposition technique.
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Au/ZnO/n-Si device has uniform surface morphology (RMS roughness is 3.26).
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Au/ZnO/n-Si device has the smallest saturation current and good rectifying property.
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This device exhibited memristor behavior.
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The device was investigated also for suitable to solar cell applications.