Wafer level packaging technology for silicon resonators

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• 作者：J. Baborowski ; A. Pezous ; G. Spinola Durante ; R. Jose James ; R. Ziltener ; C. Muller ; M.-A. Dubois
• 关键词：Silicon resonator ; AlN ; packaging ; anodic bonding ; Au-Sn sealing
• 刊名：Procedia Chemistry
• 出版年：2009
• 出版时间：August 2009
• 年：2009
• 卷：1
• 期：1
• 页码：1535-1538
• 全文大小：505 K

文摘

Recently, a family of low frequency silicon resonators with AlN piezoelectric activation has been developed. These devices need to be operated under vacuum. The main motivation for the packaging of resonator under vacuum is to increase the Q factor, and to guarantee the long-term stability of the resonance frequency. In order to minimize the size of packaged resonators, wafer level packaging (WLP) has been chosen.