P-I-N amorphous silicon for thin-film light-addressable potentiometric sensors

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• 作者：Chia-Ming Yang^a ; ^b ; ^c ; ^d ; ^{cmyang@mail.cgu.edu.tw" class="auth_mail" title="E-mail the corresponding author}Author Vitae ; Yuan-Hui Liao^aAuthor Vitae ; Chun-Hui Chen^aAuthor Vitae ; Tsung-Cheng Chen^bAuthor Vitae ; Chao-Sung Lai^b ; ^c ; ^e ; ^f ; ^{cslai@mail.cgu.edu.tw" class="auth_mail" title="E-mail the corresponding author}Author Vitae ; Dorota G. Pijanowska^g
• 关键词：a-Si ; LAPS ; PIN ; pH ; Photovoltage ; Spatial resolution
• 刊名：Sensors & Actuators: B. Chemical
• 出版年：2016
• 出版时间：29 November 2016
• 年：2016
• 卷：236
• 期：Complete
• 页码：1005-1010
• 全文大小：1526 K

文摘

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d="par0005">P-I-N stacked a-Si layers structure on glass is firstly applied in LAPS.

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d="par0010">Photovoltage of P-I-N a-Si LAPS is much higher than conventional a-Si LAPS.

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d="par0015">pH sensitivity is 40 mV/pH for NbOx layer on P-I-N a-Si LAPS.

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d="par0020">Signal-to-noise ratio can be improved in high ac frequency modulation of red laser illumination by P-I-N a-Si LAPS, which is benefit for high-speed chemical image.

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