Low temperature photo-induced carrier dynamics in the GaAs_0.985N_0.015 alloy

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• 作者：Cheng Chen^a ; Yi-Bo Han^a ; ^{ybhan@hust.edu.cn} ; Xing-Jun Wang^b ; Ping-Ping Chen^b ; Jun-Bo Han^a ; ^{junbo.han@mail.hust.edu.cn} ; Liang Li^a
• 关键词：GaAsN ; Photoluminescence ; Localization ; Diamagnetic shift
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：30 March 2017
• 年：2017
• 卷：699
• 期：Complete
• 页码：297-302
• 全文大小：2773 K
• 卷排序：699

文摘

Two non-radiative recombination channels were found in GaAs0.985N0.015. Localization of excitons leads to unexpected PL lifetimes at low temperatures. High magnetic field blocks the diamagnetic shift in this alloy.