Reducing SSD access latency via NAND flash program and erase suspension

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• 作者：Guanying WuAuthor Vitae ; Ping HuangAuthor Vitae ; Xubin He ; ^{xhe2@vcu.edu" class="auth_mail}Author Vitae
• 关键词：Data storage ; Solid state drive ; NAND flash memory ; Program and erase suspension
• 刊名：Journal of Systems Architecture
• 出版年：April, 2014
• 年：2014
• 卷：60
• 期：4
• 页码：345-356
• 全文大小：2297 K

文摘

In NAND flash memory, once a page program or block erase (P/E) command is issued to a NAND flash chip, the subsequent read requests have to wait until the time-consuming P/E operation to complete. Preliminary results show that the lengthy P/E operations increase the read latency by 2脳 on average. This increased read latency caused by the contention may significantly degrade the overall system performance. Inspired by the internal mechanism of NAND flash P/E algorithms, we propose in this paper a low-overhead P/E suspension scheme, which suspends the on-going P/E to service pending reads and resumes the suspended P/E afterwards. Having reads enjoy the highest priority, we further extend our approach by making writes be able to preempt the erase operations in order to improve the write latency performance. In our experiments, we simulate a realistic SSD model that adopts multi-chip/channel and evaluate both SLC and MLC NAND flash as storage materials of diverse performance. Experimental results show the proposed technique achieves a near-optimal performance on servicing read requests. The write latency is significantly reduced as well. Specifically, the read latency is reduced on average by 46.5% compared to RPS (Read Priority Scheduling) and when using write-suspend-erase the write latency is reduced by 13.6% relative to FIFO.