Improved interface properties and reliability for Hf-In-Zn-O semiconductor capacitors with an electric-double-layer gate dielectric by inserting a HfO₂ interlayer

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• 作者：Xiao Zou ; Guojia Fang ; Pingli Qin ; Hongjiu Wang ; Zengcai Song ; Haoning Wang ; Hao Long ; Qing Wan
• 关键词：Hf-In-Zn-O ; Metal-Oxide-Semiconductor Capacitors ; Electric-Double-Layer ; Hafnium Dioxide ; Stack gate dielectrics ; Reliability
• 刊名：Thin Solid Films
• 出版年：2013
• 出版时间：1 July, 2013
• 年：2013
• 卷：540
• 期：Complete
• 页码：261-265
• 全文大小：871 K

文摘

The electrical characteristics and reliability of Hf-In-Zn-O (HIZO) metal-oxide-semiconductor capacitors (MOSCAPs) with a microporous SiO₂-based electric-double-layer (EDL) dielectric were investigated. Experimental results indicated that the HfO₂ interlayer could effectively improve the interface quality, thus leading to reduced interface states, suppressed hysteresis and decreased gate leakage current. Improved performance was achieved for the HIZO MOSCAPs with HfO₂/EDL stack gate dielectrics (HECAPs), such as a large capacitance density of 0.7 ¦ÌF/cm², an interface state density of 5.7 ¡Á 10¹¹ eV^? 1/cm², a fixed charge density of 1.9 ¡Á 10¹² cm^? 2, a hysteresis voltage of 230 mV and a gate leakage current density of 3 ¡Á 10^? 6 A/cm² at + 1 V. Moreover, enhanced reliability of the HECAPs was obtained with an elevated dielectric breakdown voltage of 4.8 V and a small increase (< 15 % ) of gate leakage after gate bias stressing at 2 V for 3600 s.