Investigation on morphology and evolution process of plasma induced pitting damage during the ICP etching of fused silica
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- 作者：Xiaolong Jiang ; Ying Liu ; liuychch@ustc.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Bilali Muhutijiang ; Zhengkun Liu ; Keqiang Qiu ; Xiangdong Xu ; Yilin Hong ; Shaojun Fu
- 关键词：Plasma induced pitting damage ; ICP etching ; Fused silica ; Subsurface damage ; Morphology ; Evolution
- 刊名：Vacuum
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：123
- 期：Complete
- 页码：121-125
- 全文大小：997 K
文摘
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Plasma induced pits (PIP) are found to inherently have uniform diameter.
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PIP evolution in both reactive and physical etching are studied.
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An etchant redistribution theory is proposed in reactive etching.
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PIP is found to form at the beginning of plasma process.