Direct evidence of reactive ion etching induced damages in Ge2Sb2Te5 based on different halogen plasmas
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- 作者：Juntao Lia ; b ; 1 ; Yangyang Xiaa ; c ; 1 ; Bo Liua ; liubo@mail.sim.ac.cn" class="auth_mail" title="E-mail the corresponding author ; Gaoming Fengd ; Zhitang Songa ; Dan Gaoa ; c ; Zhen Xua ; c ; Weiwei Wanga ; c ; Yipeng Chand ; Songlin Fenga
- 关键词：Ge2Sb2Te5 ; Reactive ion etching ; Etch damage ; Phase change memory
- 刊名：Applied Surface Science
- 出版年：2016
- 出版时间：15 August 2016
- 年：2016
- 卷：378
- 期：Complete
- 页码：163-166
- 全文大小：2287 K
文摘
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The results of SEM and AFM directly showed that the surface of Cl2 etched samples were roughest with a Ge deficient damaged layer.
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The XPS of Te 3d revealed the electrons were transferred from chalcogenide to halogen and the highest halogenation was observed on CF4 etching GST films.
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The sidewall of HBr etching GST is nearly vertical compared with others.
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HBr is promising gas for GST etching in the fabrication of high-density memory devices.