Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
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- 作者：Young Joon Cho ; Hamchorom Cha ; Hyo Sik Chang ; hschang@cnu.ac.kr" class="auth_mail" title="E-mail the corresponding author
- 关键词：Si solar cell ; Surface passivation ; Atomic layer deposition ; Plasma nitridation ; Al2O3 ; Carrier lifetime ; Plasma-enhanced chemical vapor deposition
- 刊名：Surface and Coatings Technology
- 出版年：2016
- 出版时间：15 December 2016
- 年：2016
- 卷：307
- 期：part_PB
- 页码：1096-1099
- 全文大小：542 K
文摘
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The effect of NH3 nitridation on atomic layer deposition Al2O3 films was studied.
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NH3 plasma nitridation on Al2O3 to form aluminum oxynitride (AlON)
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AlON films show better passivation performance than Al2O3 films for Si solar cell.