Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs
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- 作者：D. Bisia ; davide.bisi@dei.unipd.it" class="auth_mail" title="E-mail the corresponding author ; bisi@dei.unipd.it" class="auth_mail" title="E-mail the corresponding author ; A. Stoccoa ; antonio.stocco@dei.unipd.it" class="auth_mail" title="E-mail the corresponding author ; I. Rossettoa ; M. Meneghinia ; F. Rampazzoa ; A. Chinib ; alessandro.chini@unimore.it" class="auth_mail" title="E-mail the corresponding author ; F. Socib ; A. Pantellinic ; alessio.pantellini@selex-es.com" class="auth_mail" title="E-mail the corresponding author ; C. Lanzieric ; claudio.lanzieri@selex-es.com" class="auth_mail" title="E-mail the corresponding author ; P. Gamarrad ; C. Lacamd ; M. Tordjmand ; M.-A. di Forte-Poissond ; marie-antoinette.poisson@3-5lab.fr" class="auth_mail" title="E-mail the corresponding author ; D. De Salvadore ; davide.desalvador@unipd.it" class="auth_mail" title="E-mail the corresponding author ; M. Bazzane ; G. Meneghessoa ; E. Zanonia ; enrico.zanoni@dei.unipd.it" class="auth_mail" title="E-mail the corresponding author
- 关键词：GaN ; HEMT ; RF ; Buffer ; Iron ; Carbon ; Short-channel ; Trapping ; Reliability
- 刊名：Microelectronics Reliability
- 出版年：2015
- 出版时间：August-September 2015
- 年：2015
- 卷：55
- 期：9-10
- 页码：1662-1666
- 全文大小：468 K
文摘
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Buffer compensation studied by means of static and dynamic I-V, DCTS, XRD, and rf stress tests.
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Devices equipped with C-doped and Fe-doped GaN buffer feature improved subthreshold behaviour and improved RF reliability.
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Devices equipped with Fe- and C-doping experience higher dynamic current dispersion.