Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy

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• 作者：Benjamin N. Bryant ; ^{Bryant93@gmail.com} ; Asako Hirai ; Erin C. Young ; Shuji Nakamura ; James S. Speck
• 关键词：A1. QECS ; A1. Wulff plot ; A3. HVPE ; B1. GaN
• 刊名：Journal of Crystal Growth
• 出版年：2013
• 出版时间：15 April, 2013
• 年：2013
• 卷：369
• 期：Complete
• 页码：14-20
• 全文大小：1142 K

文摘

In this paper we demonstrate work on developing the kinetic Wulff plots and quasi-equilibrium crystal shapes of GaN by hydride vapor phase epitaxy to understand the stable polar, semipolar, and nonpolar planes that emerge naturally from the GaN crystal. High quality bulk m-plane GaN substrates were masked with circular openings to perform selective area growth studies. Growths were performed by hydride vapor phase epitaxy over a range of temperatures, pressures and carrier gases. The quasi-equilibrium crystal shapes were shown to have clear m-plane {} facets and a sharp and flat () N-face or c? face. The (0001) Ga-face or c+ face became faceted with {} planes emerging with reduced pressures and temperatures. Based on the stable facets, kinetic Wulff plots were constructed.