Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates

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• 关键词：A1. Characterization ; A3. Hydride vapor phase epitaxy ; B1. GaN ; B1. Nitrides ; B2. Semiconducting III&ndash ; V materials
• 刊名：Journal of Crystal Growth
• 出版年：2016
• 出版时间：15 December 2016
• 年：2016
• 卷：456
• 期：Complete
• 页码：80-85
• 全文大小：2016 K
• 卷排序：456

文摘

Non-polar and semi-polar growth appears on the edges of HVPE grown in c-direction. The edges generate significant stress leading to structural deterioration of HVPE-GaN. Crystallization on the edges of the HVPE-GaN/Am-GaN couple should be prevented. Appropriate treatment of the edges or changing the shape of the seed is a solution.