Phase displacement study in MOSFET based ring VCOs due to heavy-ion irradiation using 3D-TCAD and circuit simulation
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- 作者：Maran Ponnambalama ; maranponnambalam@gmail.com" class="auth_mail" title="E-mail the corresponding author ; N. Vinodhkumarb ; vinodhkumar.cc@gmail.com" class="auth_mail" title="E-mail the corresponding author ; R. Srinivasanb ; srinivasanr@ssn.edu.in" class="auth_mail" title="E-mail the corresponding author ; Premanand Venkatesh Chandramania ; premanandc@ssn.edu.in" class="auth_mail" title="E-mail the corresponding author
- 关键词：Radiation harderning ; Single event transient (SET) ; Current starved delay cell ; Ring VCO ; Phase displacement ; Radiation hardened by design (RHBD) ; Linear energy transfer (LET)
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：October 2016
- 年：2016
- 卷：65
- 期：Complete
- 页码：27-34
- 全文大小：1659 K
文摘
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Differential ring VCO exhibits a SET induced phase displacement improvement of 20%.
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Active area of differential delay ring VCO is 40% less compared to single ended ring VCO.
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Average power of differential ring VCO is 4 times more than single ended ring VCO.