A Fully-Integrated CMOS LDO Regulator for Battery-Operated On-Chip Measurement Systems

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• 作者：J. Pé ; rez-Bailó ; n^a ; ^{610686@unizar.es} ; A. Má ; rquez^a ; B. Calvo^a ; N. Medrano^a ; P.A. Martí ; nez^a ; M.T. Sanz-Pascual^b
• 关键词：Voltage regulator ; low drop-out (LDO) ; CMOS design ; System-on-Chip (SoC) ; power management ; portable sensing devices
• 刊名：Procedia Engineering
• 出版年：2016
• 出版时间：2016
• 年：2016
• 卷：168
• 期：Complete
• 页码：1655-1658
• 全文大小：416 K
• 卷排序：168

文摘

This paper presents a fully-integrated 0.18 μm CMOS low drop-out (LDO) regulator designed to drive on-chip low power front-end sensor nodes. The proposed LDO is based on a simple telescopic amplifier stage with internal cascode compensation driving a PMOS pass-device, providing a high precision 1.8 V output voltage for input voltages from 3.6 V to 1.92 V up to a 50 mA load current with only 22 μA quiescent current. Line and load regulation are respectively better than 0.017 mV/V and 0.003 mV/mA, while recovery times are below 4 μs over a (-40 °C, 120 °C) temperature span.