Quasi-3D modeling of surface potential and threshold voltage of Triple Metal Quadruple Gate MOSFETs

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• 作者：Santosh Kumar Gupta ; ^{skg@mnnit.ac.in} ; Mihir Kumar P. Shah ^{shahmihir.osho@gmail.com}
• 关键词：Equivalent number of gates (ENG) ; Quasi-3D ; Surface potential ; Threshold voltage ; Triple Metal Quadruple Gate
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：455-468
• 全文大小：1595 K
• 卷排序：101

文摘

A quasi-3D Surface potential and threshold voltage model of 3D TMQG MOSFET of rectangular cross-section has been developed and validated. This method solves two 2-D Poisson’s equations corresponding to two 2D perpendicular cross-sections of TMQG using ENG method. The developed model proves to be simple and reasonably correct.