Sputter rate measurements of Cu(In,Ga)Se₂ absorber layers with varied Ga ratios, primary voltage, and angle of incidence by secondary ion mass spectrometry

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• 作者：Jesse Claypoole^a ; Steve Novak^a ; Mark Altwerger^a ; Dan Dwyer^a ; Pradeep Haldar^a ; Matt Eisaman^b ; ^c ; ^d ; Harry Efstathiadis^a ; ^{hefstathiadis@sunypoly.edu}
• 关键词：Secondary ion mass spectrometry (SIMS) ; Absorber layer ; Semiconductors ; Thin films ; Photovoltaics ; Sputter rate
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：5 March 2017
• 年：2017
• 卷：696
• 期：Complete
• 页码：808-813
• 全文大小：1228 K
• 卷排序：696

文摘

Sputter rate of Cu(In,Ga)Se2 at 0.0–0.5 Ga/(In + Ga) ratios using a Cs beam. Point-by-point depth sputter rate correction method for CIGS. CIGS with varying Ga/(In + Ga) ratio grading dip magnitudes with respect to depth.