Growth mechanism and field emission behavior of carbon nanotubes grown over 300 nm thick aluminium interlayer

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• 作者：Preeti V. Shah ; Pika Jha ; Seema Gautam ; Monika Kumari ; Jaswant S. Rawat ; Partap K. Chaudhury
• 关键词：Aluminium interlayer ; Carbon nanotubes ; Contact resistance ; Field emission ; Scanning electron microscopy ; Raman Spectroscopy
• 刊名：Diamond and Related Materials
• 出版年：2013
• 出版时间：October, 2013
• 年：2013
• 卷：39
• 期：Complete
• 页码：58-64
• 全文大小：1364 K

文摘

The influence of thick aluminium (Al) ~ 300 nm interlayer on the growth and field emission (FE) properties of carbon nanotubes (CNTs) deposited on silicon coated with a 2 nm iron (Fe) catalyst was studied. The CNTs were grown over silicon substrate with and without Al-interlayer via CVD. It was observed that the presence of such high thickness of the interlayer on the substrate resulted in higher growth rate, narrower diameters and longer height of CNTs compared to CNTs grown on silicon (Si) substrate coated only with Fe. Al-interlayer hinders the diffusion of Fe into silicon, hence promotes the growth rate. Literature reports that a thick layer of Al causes Fe to diffuse into it, negatively affecting the growth. However, in our experiments, no evidence of depletion of Fe from the substrate was observed. Unique patterns of grown CNTs could be attributed to anisotropic Al-melting over the silicon substrate resulting in Al/Fe rich and deficient regions. The drastic improvement of current density from 0.41 mA/cm² to 20 mA/cm² at a field of 3.5 V/¦Ìm was found with Al-interlayer CNT grown samples. These mechanisms of improvements in field emission characteristics have been discussed in detail.