Structural and optical properties of Fe-doped SnS₂ nanoflakes prepared by molten salt solid state reaction

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• 作者：Areej S. Alqarni ^{aqarni@taibahu.edu.sa" class="auth_mail" title="E-mail the corresponding author} ; O.A. Yassin ; ^{oyassin@taibahu.edu.sa" class="auth_mail" title="E-mail the corresponding author} ; ^{oyassin63@gmail.com" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Semiconductor processing ; Optical absorption ; Intermediate band
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：42
• 期：part_P3
• 页码：390-396
• 全文大小：6931 K

文摘

Tin (IV) disulfides (SnS₂) doped with Fe ions are prepared through the molten salt solid state reaction at 280 °C and the effect of the Fe-doping on their structural and optical properties is reported. They were found to be nanocrystalline hexagonal structure with nanoflakes morphology with an average size 30 nm. The analysis of the optical data showed that all the samples are indirect semiconductors. Two absorption bands are observed in their optical diffuse reflectance spectra which indicate setting of two photons absorption processes due to formation of Fe intermediate band. The band gaps Image" height="15" width="16" alt="View the MathML source" style="margin-top: -5px; vertical-align: middle" title="View the MathML source" src="/sd/grey_pxl.gif" data-inlimgeid="1-s2.0-S136980011530247X-si0009.gif">$E_{gH}^{Ind}$ and $E_{gL}^{Ind}$ that correspond to the two photons absorptions are found to vary from 1.49 to 1.09 eV and 0.76 to 0.93 eV, respectively. The most significant findings is that the sum of $E_{gH}^{Ind}$ and $E_{gL}^{Ind}$ has values between 2.25 and 2.02 eV which reproduces or slightly enhances the band gap value of the parent SnS₂ (2.01 eV). This finding is directly related with the perseveration of the output voltage (V_o) which is a major condition required for realization of intermediate band solar cells with high solar conversion efficiency.