Tuning the physical properties of PbS thin films towards optoelectronic applications through Ni doping

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• 作者：C. Rajashree ; A.R. Balu ; ^{arbalu757@gmail.com" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Crystal structure ; Defects ; Thin films ; Optical band gap ; Electrical resistivity
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2016
• 出版时间：October 2016
• 年：2016
• 卷：127
• 期：20
• 页码：8892-8898
• 全文大小：1277 K

文摘

Ni-doped PbS (PbS:Ni) thin films were deposited on glass substrates by cost-effective spray pyrolysis technique with different concentrations of Ni (0, 2, 4, 6 and 8 at.%). XRD studies reveal that all the films exhibit face centered cubic structure. The preferential orientation of the undoped PbS film is along the (2 0 0) plane and for the doped films the preferential orientation is along the (1 1 1) plane. Optical studies show that the film transparency increases with increase in Ni doping concentration and the optical band gap exhibit a red shift from 2.26 eV to 2.06 eV. Electrical studies show that all the as deposited PbS:Ni thin films have resistivity in the order of 10⁻¹ Ω-cm. Raman studies reveal that the peak at 161 cm⁻¹ might have been originated from the combination of longitudinal and transverse acoustic phonon modes in PbS crystals. Increased transparency and nominal resistivity values obtained make PbS:Ni thin films suitable for optoelectronic applications especially in solar cells.