Single crystal growth of Sn_0.97Ag_0.03Se by a novel horizontal Bridgman method and its thermoelectric properties

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• 作者：Min Jin^a ; ^{jinmin@nimte.ac.cn} ; Hezhu Shao^a ; ^{hzshao@nimte.ac.cn} ; Haoyang Hu^a ; Debo Li^a ; Jingtao Xu^a ; Guoqiang Liu^a ; Hui Shen^b ; Jiayue Xu^b ; Haochuan Jiang^a ; Jun Jiang^a ; ^{jjun@nimte.ac.cn}
• 关键词：B2. Sn0.97Ag0.03Se single crystal ; A2. Horizontal Bridgman method ; A1. Stoichiometry ratio ; B2. Thermoelectric property
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：460
• 期：Complete
• 页码：112-116
• 全文大小：959 K
• 卷排序：460

文摘

Sn0.97Ag0.03Se crystal was grown by a novel horizontal Bridgman method. B2O3 encapsulant was used to prevent Se volatilization during crystal growth. Sn0.97Ag0.03Se single crystal about 25×20×15 mm3 in dimensions was obtained. ZT=0.95 was obtained under 793 K corresponding to Pnma-Cmcm phase transition temperature.