Properties of fluorine-doped tin oxide films prepared by an improved sol-gel process

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• 作者：X.H. Shi ; K.J. Xu ; ^{xukj@sdut.edu.cn}
• 关键词：Sol-gel process ; Evaporation method ; Fluorine-doped tin oxide ; Photoelectric property ; Films
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：58
• 期：Complete
• 页码：1-7
• 全文大小：3028 K
• 卷排序：58

文摘

Fluorine-doped tin oxide (FTO) films were prepared by an improved sol-gel process, in which FTO films were deposited on glass substrates using evaporation method, with the precursors prepared by the conventional sol-gel method. The coating and sintering processes were combined in the evaporation method, with the advantage of reduced probability of films cracking and simplified preparation process. The effects of F-doping contents and structure of films on properties of films were analyzed. The results showed the performance index (ΦTC=3.535×10−3 Ω−1 cm) of the film was maximum with surface resistance (Rsh) of 14.7 Ω cm−1, average transmittance (T) of 74.4% when F/Sn=14 mol%, the reaction temperature of the sol was 50 °C, and the evaporation temperature was 600 °C in muffle furnace, and the film has densification pyramid morphology and SnO2−xFx polycrystalline structure with tetragonal rutile phase. Compared with the commercial FTO films (ΦTC=3.9×10−3 Ω−1 cm, Rsh=27.4 Ω cm−1, T=80%) produced by chemical vapor deposition (CVD) method, the ΦTC value of FTO films prepared by an improved sol-gel process is close to them, the electrical properties are higher, and the optical properties are lower.