Mobility in ultrathin SOI MOSFET and pseudo-MOSFET: Impact of the potential at both interfaces

详细信息    查看全文

• 作者：G. Hamaide^a ; F. Allibert^a ; ^{frederic.allibert@soitec.fr} ; F. Andrieu^b ; K. Romanjek^b ; S. Cristoloveanu^c
• 关键词：SOI ; Mobility ; Mobility-thickness dependence ; MOSFET ; Pseudo-MOSFET ; Silicon-on-insulator ; Vertical field
• 刊名：Solid-State Electronics
• 出版年：2011
• 出版时间：March 2011
• 年：2011
• 卷：57
• 期：1
• 页码：83-86
• 全文大小：284 K

文摘

The mobility-thickness dependence in SOI films is clarified. Measurements in fully depleted SOI MOSFETs show that the low-field mobility at the front channel decreases by thinning the Si film or by sweeping the back gate from depletion into accumulation. We demonstrate that this mobility degradation is only apparent, being related to the potential value at the surface facing the channel. This opposite-surface potential induces an intrinsic vertical field which adds to the usual gate-related field. The mobility drop simply indicates a deviation from the low-field condition which cannot be achieved. We propose an updated model for proper extraction and interpretation of the low-field mobility. Pseudo-MOSFET results reveal the existence of a similar additional vertical field in bare SOI wafers, induced by charges present on the unpassivated surface. This intrinsic field increases in thinner films and affects pseudo-MOSFET conduction. The mobility decrease measured in SOI wafers with thinner films reflects the increasing impact of the intrinsic field and does not imply any degradation in quality of film-BOX interface.