Indium-modified Yb:KLu(WO₄)₂ crystal: Growth, spectroscopy and laser operation

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• 作者：J.M. Serres^a ; X. Mateos^a ; ^b ; ^{xavier.mateos@urv.cat} ; ^{mateos@mbi-berlin.de} ; P. Loiko^c ; U. Griebner^b ; V. Petrov^b ; K. Yumashev^d ; M. Aguiló ; ^a ; F. Dí ; az^a
• 关键词：Monoclinic double tungstates ; Absorption ; Luminescence ; Ytterbium ; Diode-pumped laser
• 刊名：Journal of Luminescence
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：183
• 期：Complete
• 页码：391-400
• 全文大小：3527 K
• 卷排序：183

文摘

We report on the growth, spectroscopic and laser characterization of a novel monoclinic laser crystal, Yb,In:KLu(WO4)2 (Yb,In:KLuW). The absorption, stimulated-emission and gain cross-section spectra of 3.5 at% Yb, 5.5 at% In-doped KLuW are determined at room temperature with polarized light and compared with those for Yb,In:KYW, as well as singly Yb-doped KLuW and KYW crystals. It is found that the introduction of In results in a decrease of the transition cross-sections and in a spectral broadening of the absorption and emission bands. Such a broadening is more pronounced for light polarization E ||Np. For Yb,In:KLuW, the maximum σabs is 9.9×10–20 cm2 at 980.9 nm for E ||Nm and the corresponding bandwidth of the absorption peak is 3.7 nm. The radiative lifetime for Yb3+ ions is 237±5 µs. The stimulated-emission cross-sections are σSE(m)=2.4×10–20 cm2 at 1022.4 nm and σSE(p)=1.3×10–20 cm2 at 1039.1 nm corresponding to an emission bandwidth of >30 nm and >35 nm, respectively. The diode-pumped Ng-cut Yb,In:KLuW microchip laser generated 4.11 W at 1042–1048 nm with a slope efficiency of 78%. The Yb,In:KLuW crystal is very promising for the generation of sub-100 fs pulses in mode-locked lasers due to its broadband emission characteristics.