Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers
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- 作者：Manjunath Puttaswamya ; Marko Vehkamä ; kia ; Kaupo Kuklia ; b ; kaupo.kukli@helsinki.fi" class="auth_mail" title="E-mail the corresponding author ; Mukesh Chandra Dimric ; 1 ; Marianna Kemella ; Timo Hatanpä ; ä ; a ; Mikko J. Heikkilä ; a ; Kenichiro Mizohatad ; Raivo Sternc ; Mikko Ritalaa ; Markku Leskelä ; a
- 关键词：Multiferroic ; Heterostructures ; Atomic layer deposition ; Ferromagnetic ; Ferroelectric
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：29 July 2016
- 年：2016
- 卷：611
- 期：Complete
- 页码：78-87
- 全文大小：1403 K
文摘
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Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C.
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The major phase formed in the films upon annealing at 500 °C was BiFeO3.
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BiFeO3 films and films containing excess Bi favored electrical charge polarization.
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Slight excess of iron oxide enhanced saturative magnetization behavior.