A strategy to boost the cell performance of CdSexTe1−x quantum dot sensitized solar cells over 8% by introducing Mn modified CdSe coating layer
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- 作者：Guoshuai Wanga ; Huiyun Weia ; Yanhong Luoa ; Huijue Wua ; Dongmei Lia ; dmli@iphy.ac.cn" class="auth_mail" title="E-mail the corresponding author ; Xinhua Zhongb ; zhongxh@ecust.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Qingbo Menga ; qbmeng@iphy.ac.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Sensitized solar cells ; CdSexTe1&minus ; x alloyed quantum dots ; Mn doped CdSe ; Interface modification
- 刊名：Journal of Power Sources
- 出版年：2016
- 出版时间：20 January 2016
- 年：2016
- 卷：302
- 期：Complete
- 页码：266-273
- 全文大小：2144 K
文摘
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Mn-doped CdSe interfacial modification layer is introduced into QDSCs.
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Up to 8.14% of efficiency obtained for CdSexTe1−x QDSCs.
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Enhancement of the deposition rate of Mn–CdSe QDs and light absorption.
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Charge recombination restrained by (Mn-)CdSe passivation layer.