The important role of Ga vacancies in the ferromagnetic GaN thin films

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• 作者：Xingguo Gao^a ; Baoyuan Man^b ; ^{byman@sdnu.edu.cn} ; Chao Zhang^b ; Jiancai Leng^a ; Yulong Xu^a ; Qiang Wang^a ; Meina Zhang^a ; Yan Meng^a
• 关键词：GaN ; Thin film ; DMS ; LMBE ; Annealing
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：30 March 2017
• 年：2017
• 卷：699
• 期：Complete
• 页码：596-600
• 全文大小：1002 K
• 卷排序：699

文摘

Unintentionally doped GaN films were ferromagnetic at room temperature. VGa plays an important role in the origin of room-temperature ferromagnetism. Annealing is an effective means of introducing Ga vacancies in GaN lattice. The annealing temperature has prominent effects on the properties of GaN films.