Electrical transport and thermoelectric properties of PbTe_1−xI_x synthesized by high pressure and high temperature

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• 作者：Manman Yang^a ; Hongyu Zhu^b ; ^{pearl3394@126.com} ; Hongtao Li^c ; Taichao Su^a ; ^{taichao80@hotmail.com} ; Qiang Hu^b ; Shangsheng Li^a ; Meihua Hu^a ; Baoli Du^b ; Hongan Ma^d ; Xiaopeng Jia^d
• 关键词：Thermoelectric properties ; PbTe ; High pressure ; Carrier concentration
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：5 March 2017
• 年：2017
• 卷：696
• 期：Complete
• 页码：161-165
• 全文大小：1485 K
• 卷排序：696

文摘

PbTe doped with I were fast prepared by high pressure and high temperature method. The carrier concentration of HPHT synthesized PbTe1−xIx is sensitive to I content. Large power factor and high ZT value was obtained for PbTe doped with 0.03 mol% I. HPHT synthesized PbTe1−xIx have good thermal stability from 300 to 600 K.