Enhanced thermoelectric performance of MnTe via Cu doping with optimized carrier concentration

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• 作者：Yangyang Ren¹Author Vitae ; Qinghui Jiang¹Author Vitae ; Junyou Yang ; ^{jyyang@mail.hust.edu.cn" class="auth_mail" title="E-mail the corresponding author}Author Vitae ; Yubo Luo ; Dan Zhang ; Yudong Cheng ; Zhiwei Zhou
• 关键词：MnTe ; Thermoelectric materials ; Doping ; Carrier concentration
• 刊名：Journal of Materiomics
• 出版年：2016
• 出版时间：June 2016
• 年：2016
• 卷：2
• 期：2
• 页码：172-178
• 全文大小：2231 K

文摘

Polycrystalline Mn_1-xCu_xTe (x = 0, 0.025, 0.05, 0.075) thermoelectric materials were prepared by a combined method of melt-quenching and hot press. The effect of Cu doping on the electrical resistivity, band gap, the Seebeck coefficient and thermal conductivity was investigated. The power factors of the Cu-doped samples increase greatly due to the decrease of electrical resistivity and the higher Seebeck coefficient in high temperatures. In addition, the thermal conductivities of the Cu-doped samples also reduce due to the extra phonon scattering from the point defects introduced by Cu doping. As a result, the thermoelectric performance of MnTe is greatly enhanced, and a maximum ZT value of ∼0.55 in the Mn_0.925Cu_0.075Te sample at 773 K is achieved, which is 35% greater than that of the pristine MnTe sample.