Nanoforest of black silicon fabricated by AIC and RIE method
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- 作者：Qiulin Tana ; b ; tanqiulin@nuc.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Licheng Tanga ; b ; c ; Haiyang Maoc ; Yuanjing Chena ; b ; c ; Yaohui Rena ; b ; c ; Cheng Leia ; b ; c ; Feng Yuanc ; Wen Ouc ; Jijun Xionga ; b ; xiongjijun@nuc.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Microstructure ; Black silicon ; AIC ; RIE ; XPS ; Optical materials and properties
- 刊名：Materials Letters
- 出版年：2016
- 出版时间：1 February 2016
- 年：2016
- 卷：164
- 期：Complete
- 页码：613-617
- 全文大小：6274 K
文摘
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A novel fabrication method of black silicon by using AIC and RIE processes.
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Rough layer including AlSix intermetallics is generated and acted as etch masks.
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Better absorption properties than polysilicon in 3–5 μm and than Si3N4 in 8–14 μm.