Irradiation of semiconductor devices using a 10 MeV travelling wave electron linear accelerator

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• 作者：Quanfeng ; Li ; Huiyong ; Yan ; Taibin ; Du ; Peiqing ; Wang
• 关键词：Electron irradiation ; Semiconductor devices ; EGS4 ; Packaged power thyristor
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2001
• 出版时间：March, 2001
• 年：2001
• 卷：174
• 期：1-2
• 页码：194-198
• 全文大小：105 K

文摘

A 10 MeV travelling wave electron linear accelerator, previously used for teaching, was adapted to irradiate semiconductor devices. Theoretical formulas and the EGS4 programs were used to validate the feasibility and superiority of using the 10 MeV electron linear accelerator for irradiating the semiconductor devices. Electron energies should be greater than 7 MeV to irradiate packaged high-power thyristors. Irradiation increased diodes' breakdown voltage and decreased their reverse recovery time when accelerated electrons irradiated packaged diodes. Controllable high-power packaged power thyristors are also irradiated to shorten the minority carrier lifetime and turn-off time. The resulting product quality reached expected requirements.