Effects of thickness on energy storage of (Pb, La)(Zr, Sn, Ti)O₃ antiferroelectric films deposited on LaNiO₃ electrodes

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• 作者：Quanliang Zhao^a ; ^{zql-01@163.com" class="auth_mail" title="E-mail the corresponding author} ; Hong Lei^a ; Guangping He^a ; Jiejian Di^a ; Dawei Wang^a ; Peipei Tan^a ; Haibo Jin^b ; Maosheng Cao^b
• 关键词：Antiferroelectric film ; Thickness ; Energy storage ; Phase transition
• 刊名：Ceramics International
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：42
• 期：1
• 页码：1314-1317
• 全文大小：1611 K

文摘

(Pb_0.97La_0.02)(Zr_0.9Sn_0.05Ti_0.05)O₃ (PLZST) antiferroelectric films were deposited on LaNiO₃/Si substrates by a sol–gel method. The XRD results show that the PLZST films are restrained by the LaNiO₃ films and coexisted ferroelectric phases are induced by the internal compressive stress. As the PLZST film thickness increases, the remnant polarization and dielectric constant decrease while the energy storage density increases. It could be explained by the increasing antiferroelectric phase in the PLZST film with large thickness. Therefore, the energy storage property can be improved by increasing the PLZST film thickness.