An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures

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• 作者：C.C. Ahia^a ; ; N. Tile^a ; Z.N. Urgessa^a ; J.R. Botha^a ; J.H. Neethling^b
• 关键词：A1. Defects ; A1. Nucleation ; A1. Substrates ; A3. Metalorganic vapor phase epitaxy ; A3. Quantum wells
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：15 January 2017
• 年：2017
• 卷：458
• 期：Complete
• 页码：53-59
• 全文大小：1418 K
• 卷排序：458

文摘

Inter-diffusion between Ga and In during capping of InSb QD can yield an InGaSb QW. NIR-PL (∼710–750 meV) ascribed to recombination in an InGaSb QW and not InSb QDs. Excitation power dependent PL typical for intra-well non-uniformities.