The Effect of the number of InGaN/GaN pairs on the photoelectrochemical properties of InGaN/GaN multi quantum wells

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• 作者：Hyojung Bae^a ; Jun-Beom Park^a ; Katsushi Fujii^b ; Hyo-Jong Lee^c ; Sang-Hyun Lee^d ; Sang-Wan Ryu^a ; June Key Lee^a ; Jun-Seok Ha^a ; ^{jsha@jnu.ac.kr}
• 关键词：Hydrogen generation ; InGaN/GaN ; Multi quantum well ; Photoelectrochemistry ; Water splitting
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 April 2017
• 年：2017
• 卷：401
• 期：Complete
• 页码：348-352
• 全文大小：2212 K
• 卷排序：401

文摘

The 1–5 period InGaN/GaN quantum well (QW) structures were grown on sapphire. The photoelectrochemical properties of these structures were investigated. The saturated photocurrent density increased with increasing number of QW pairs. But, it was different in the stability of the photoanode. We reported the reason for this difference.