Effect of carriers localized in clusters on optical properties of In_0.21Ga_0.79As/GaAs multiple quantum wells

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• 作者：Ibtissem Fraj ; ^{frajibtissem@yahoo.fr} ; Tarek Hidouri ; Faouzi Saidi ; ^{faouzi.saidi@gmail.com} ; Lotfi Bouzaiene ; Larbi Sfaxi ; Hassen Maaref
• 关键词：Photoluminescence ; Multiple quantum wells ; S-shaped form ; LSE model
• 刊名：Current Applied Physics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：17
• 期：1
• 页码：1-5
• 全文大小：1247 K
• 卷排序：17

文摘

The optical properties of InGaAs MQWs have been investigated using PL spectroscopy. An asymmetric line shape in PL spectrum is related to Indium clusters formation. Indium quantum dot-like states shows atypical temperature-dependent PL properties. LSE model is successively used to interpret the abnormal keys of luminescence. Polarity strongly influences the potential fluctuation and critical temperatures.