Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance

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• 作者：Kenta Imada^a ; Manabu Ishimaru^a ; ^{ishimaru@post.matsc.kyutech.ac.jp" class="auth_mail" title="E-mail the corresponding author} ; Kazuhisa Sato^b ; Haizhou Xue^c ; Yanwen Zhang^d ; ^c ; Steven Shannon^e ; William J. Weber^c ; ^d
• 关键词：Nanostructured materials ; Carbides ; Amorphization ; Scanning/transmission electron microscopy (STEM)
• 刊名：Journal of Nuclear Materials
• 出版年：2015
• 出版时间：October 2015
• 年：2015
• 卷：465
• 期：Complete
• 页码：433-437
• 全文大小：1532 K

文摘

Nano-engineered 3C–SiC thin films, which possess columnar structures with high-density stacking faults and twins, were irradiated with 2 MeV Si ions at cryogenic and room temperatures. From cross-sectional transmission electron microscopy observations in combination with Monte Carlo simulations based on the Stopping and Range of Ions in Matter code, it was found that their amorphization resistance is six times greater than bulk crystalline SiC at room temperature. High-angle bright-field images taken by spherical aberration corrected scanning transmission electron microscopy revealed that the distortion of atomic configurations is localized near the stacking faults. The resultant strain field probably contributes to the enhancement of radiation tolerance of this material.