On the prediction of radiation-induced SETs in flash-based FPGAs

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• 作者：S. Azimi ; B. Du ; L. Sterpone ; ^{luca.sterpone@polito.it" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Radiation sensitivity ; Single Event Transients ; Prediction ; Fault Tolerance ; Flash-based FPGAs
• 刊名：Microelectronics Reliability
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：64
• 期：Complete
• 页码：230-234
• 全文大小：731 K

文摘

The present work proposes a methodology to predict radiation-induced Single Event Transient (SET) phenomena within the silicon structure of Flash-based FPGA devices. The method is based on a MonteCarlo analysis, which allows to calculate the effective duration and amplitude of the SET once generated by the radiation strike. The method allows to effectively characterize the sensitivity of a circuit against the transient effect phenomenon. Experimental results provide a comparison between different radiation tests data, performed with different Linear Energy Transfer (LET) and the respective sensitiveness of SETs.