Study of radiation damage induced by 24 GeV/c and 26 MeV protons on heavily irradiated MCz and FZ silicon detectors

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• 作者：V. Radicci ; L. Borrello ; M. Boscardin ; M. Bruzzi ; D. Creanza ; G.F. Dalla Betta ; M. de Palma ; E. Focardi ; A. Macchiolo ; N. Manna ; et al.
• 关键词：Silicon detectors ; Radiation damage ; Micro-strip detectors
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2007
• 出版时间：11 January 2007
• 年：2007
• 卷：570
• 期：2
• 页码：330-335
• 全文大小：433 K

文摘

The aim of this work is the development of radiation hard detectors for very high luminosity colliders. A growing interest has been recently focused on Czochralski silicon as a potentially radiation-hard material. We report on the processing and characterization of micro-strip sensors and pad detectors produced by ITC-IRST on n- and p-type magnetic Czochralski and float zone silicon. Part of the samples has been irradiated using 24 GeV/c protons (CERN-Geneva), while another part has been irradiated with 26 MeV protons (FZK-Karlsruhe) up to a fluence of 5×10¹⁵ 1 MeV-neutron-equivalent/cm². All the samples have been completely characterized before and after irradiation. Their radiation hardness as a function of the irradiation fluence has been established in terms of breakdown voltage, leakage current and evaluating the more relevant mini-sensor parameter variation. Moreover, the time evolution of depletion voltage, leakage current and inter-strip capacitance has been monitored in order to study their annealing behavior and space charge sign inversion effects.