Characterization of hydrogenated and deuterated silicon carbide films codeposited by magnetron sputtering

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• 作者：D. Pantelica^a ; ^{pantel@ifin.nipne.ro" class="auth_mail" title="E-mail the corresponding author} ; P. Ionescu^a ; H. Petrascu^a ; M.D. Dracea^a ; ^d ; M. Statescu^a ; E. Matei^b ; O. Rasoga^b ; C. Stancu^c ; V. Marascu^c ; ^d ; V. Ion^c ; T. Acsente^c ; ^{tomy@infim.ro" class="auth_mail" title="E-mail the corresponding author} ; G. Dinescu^c
• 关键词：Dual magnetron sputtering ; Silicon carbide ; RBS ; ERDA
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2016
• 出版时间：15 March 2016
• 年：2016
• 卷：371
• 期：Complete
• 页码：322-326
• 全文大小：1624 K

文摘

In this work we present the deposition of amorphous SiC thin films by radiofrequency dual magnetron sputtering. The dependence of the deposited films properties over the discharges electrical power and the effect of hydrogenous species (H₂ and/or D₂) addition to main discharge gas (Ar) were investigated. Accurate elemental analysis of the samples, including detection of hydrogen and deuterium, was performed by ion beam analysis (IBA) techniques: RBS (Rutherford Backscattering Spectrometry) and ERDA (Elastic Recoil Detection Analysis). SiC_x thin films with thicknesses between 1700 and 4500 Å and C/Si ratio between 0.2/1 and 1.25/1 were obtained in different deposition conditions. The results prove that thin films of amorphous SiC with well controlled properties can be produced using radiofrequency dual magnetron sputtering.