A novel trench gate floating islands power MOSFET (TG-FLIMOSFET): Two-dimensional simulation study

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• 作者：Rakesh  ; Vaid  ; ;   ; ^{rakeshvaid@ieee.org} ; Naresh  ; Padha
• 关键词：Power MOSFET ; FLIMOSFET ; Trench gate ; Device simulation ; Buried floating layers
• 刊名：Microelectronic Engineering
• 出版年：2011
• 出版时间：November 2011
• 年：2011
• 卷：88
• 期：11
• 页码：3316-3326
• 全文大小：2259 K

文摘

Novel trench gate floating islands MOSFET (TG-FLIMOSFET) designed using the concept of ¡°Opposite Doped Buried Regions?(ODBR) and floating islands (FLI) along with trench gate technology is proposed and verified using two-dimensional simulations. The conventional FLIMOSFET experimentally demonstrated recently, although offers lowest on-resistance in the low voltage range, however, suffers from quasi-saturation effect like any other power MOSFETs. The proposed TG-FLIMOSFET demonstrated to obtain about 30 % reduction in peak electric field in drift region of the proposed device. TG-FLIMOSFET also demonstrates quasi-saturation free forward and transconductance characteristics, improved synchronous rectifying characteristics, identical breakdown voltage, reduced on-resistance and increased transconductance ¡®gm?when compared with the conventional FLIMOSFET for various trench geometries. The proposed device breaks the limit set by the conventional FLIMOSFET approximately by a factor of 10. A possible process flow sequence to fabricate the proposed device commercially by integrating multi-epitaxial process with trench gate technology is also presented.