Structural and electrical characteristics of ALD-HfO2/n-Si gate stack with SiON interfacial layer for advanced CMOS technology
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- 作者：Richa Gupta 1richagupta@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Renu Rajput ; Rakesh Prasher ; Rakesh Vaid ; rakeshvaid@ieee.org" class="auth_mail" title="E-mail the corresponding author
- 关键词：High-k dielectrics ; Interfacial layer (IL) ; FTIR ; Dit and ideality factor
- 刊名：Solid State Sciences
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：59
- 期：Complete
- 页码：7-14
- 全文大小：1354 K
文摘
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Fabrication of an ultra-thin SiON as an interfacial layer for n-Si/ALD-HfO2 gate stack with reduced leakage current is reported.
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Structural, morphological and electrical characterizations demonstrate improved performance.
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FTIR and AFM studies indicate an improved SiON film with regard to quality, uniformity and smoothness.
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FESEM and EDAX analysis reveals formation of defect-free silicon rich SiON film while XRD characterization confirms the formation of monoclinic phase of ALD-HfO2.
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C-V/I-V measurements signify the low interfacial traps, low ideality factor, improved barrier height and reduced leakage current.