Local hole doping concentration modulation on graphene probed by tip-enhanced Raman spectroscopy

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• 作者：Takuya Iwasaki^a ; ^b ; ^{t.iwasaki@jaist.ac.jp" class="auth_mail" title="E-mail the corresponding author} ; Taharh Zelai^b ; Sheng Ye^b ; Yoshishige Tsuchiya^b ; Harold M.H. Chong^b ; Hiroshi Mizuta^a ; ^b
• 刊名：Carbon
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：111
• 期：Complete
• 页码：67-73
• 全文大小：1585 K

文摘

We investigate local doping concentration modulation of graphene flakes on a SiO₂/Si substrate that has been exposed to the same chemicals in device fabrication using tip-enhanced Raman spectroscopy (TERS). By spectral line scanning across the edge of graphene, it is observed that the D peak enhancement is localized in the vicinity of the edge boundary, and the TERS spatial resolution of ∼228 nm is obtained. In the TERS spectra significant peak shifts of both the G and 2D peaks are observed more than 7 cm⁻¹ across the hump on graphene within the distance of 1 μm, while both G and 2D peaks are shifted less than 2 cm⁻¹ in the far-field spectra. This indicates that the modulation of hole doping concentration in close proximity on graphene/SiO₂/Si can be probed by using TERS surpassing the resolution of a laser diffraction limit of conventional micro Raman spectroscopy.