High-resolution X-ray photoelectron spectroscopy of Al_xGa_1−xSb

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• 作者：Ramelan ; A.H. ; Butcher ; K.S.A. ; Goldys ; E.M. ; Tansley ; T.L.
• 关键词：68.55.Ln ; 79.60.-I ; 81.05.Ea ; 81.15.Gh ; X-ray photoelectron spectroscopy ; Secondary ion mass spectroscopy ; Aluminium gallium antimonide
• 刊名：Applied Surface Science
• 出版年：2004
• 出版时间：May 15, 2004
• 年：2004
• 卷：229
• 期：1-4
• 页码：263-267
• 全文大小：122 K

文摘

Surface oxidation and growth-derived oxygen contamination for Al_0.05Ga_0.95Sb films, grown by metalorganic chemical vapour deposition (MOCVD), were systematically investigated using an X-ray photoelectron spectroscopy (XPS) system with high energy resolution. The Sb 3d_5/2 and O 1s peaks were well resolved, as were the Ga 3d peaks. All samples investigated show oxide layers (Al₂O₃, Sb₂O₃ and Ga₂O₅) on their surfaces. In particular, the percentage of aluminium oxide was very high at the sample surface compared to AlSb. Carbon incorporation was also examined. Adventitious surface carbon was high; however, in the bulk material carbon was below the detection limit of XPS and secondary ion mass spectroscopy (SIMS). These results indicate extremely low carbon content for the MOCVD growth of Al_0.05Ga_0.95Sb epilayers.