Solid state synthesis of Mn₅Ge₃ in Ge/Ag/Mn trilayers: Structural and magnetic studies

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• 作者：V.G. Myagkov^a ; ; L.E. Bykova^a ; A.A. Matsynin^a ; M.N. Volochaev^a ; V.S. Zhigalov^a ; I.A. Tambasov^a ; Yu L. Mikhlin^b ; D.A. Velikanov^a ; G.N. Bondarenko^b
• 关键词：Long-range atomic transfer ; Mn-Ge system ; Thin-film solid-state reaction ; Diffusion barrier ; Dominant diffusing species ; First phase ; Mn5Ge3 alloy
• 刊名：Journal of Solid State Chemistry
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：246
• 期：Complete
• 页码：379-387
• 全文大小：1137 K
• 卷排序：246

文摘

The migration of Ge, via an inert 2.2 µm Ag barrier, into a Mn layer. The first Mn5Ge3 phase was observed in reactions with different Ag layers. The Ge is the sole diffusing species during Mn5Ge3 formation The long-range chemical interactions control the Ge atomic transfer.